NSM11156DW6T1G
onsemi
onsemi
TRANS PNP PREBIAS/PNP 0.23W SC88
$0.02
Available to order
Reference Price (USD)
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$0.02000
500+
$0.0198
1000+
$0.0196
1500+
$0.0194
2000+
$0.0192
2500+
$0.019
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Discover the versatility of onsemi's NSM11156DW6T1G, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The NSM11156DW6T1G is widely used in IoT devices, medical equipment, and renewable energy systems. onsemi's advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the NSM11156DW6T1G offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Obsolete
- Transistor Type: 1 PNP Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 65V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 220 @ 2mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 230mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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