NSVBC114YDXV6T1G
onsemi
onsemi
TRANS PREBIAS 2NPN 50V SOT563
$0.09
Available to order
Reference Price (USD)
4,000+
$0.11435
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with onsemi's NSVBC114YDXV6T1G, a high-reliability pre-biased BJT array. This discrete semiconductor solution offers matched transistor pairs with integrated bias networks, ensuring optimal performance in amplification and switching tasks. The NSVBC114YDXV6T1G is perfect for use in audio equipment, power supplies, and automotive control systems. With onsemi's rigorous quality control, each array provides long-term stability and minimal distortion. Compact, efficient, and easy to integrate, the NSVBC114YDXV6T1G is the go-to choice for engineers seeking dependable transistor solutions.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Rohm Semiconductor
EMB3FHAT2R
onsemi
NSVBC123JDXV6T5G
onsemi
NSBC144EDXV6T1G
Toshiba Semiconductor and Storage
RN2714,LF
onsemi
NSVMUN5135DW1T1G
Toshiba Semiconductor and Storage
RN2901FE(TE85L,F)
NXP USA Inc.
PBLS1502Y,115
onsemi
NSBC144EPDXV6T1G
Toshiba Semiconductor and Storage
RN1903,LXHF(CT
Toshiba Semiconductor and Storage