NSVBC123JDXV6T5G
onsemi
onsemi
SS SOT563 SRF MT RST XSTR
$0.11
Available to order
Reference Price (USD)
1+
$0.10844
500+
$0.1073556
1000+
$0.1062712
1500+
$0.1051868
2000+
$0.1041024
2500+
$0.103018
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with onsemi's NSVBC123JDXV6T5G, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The NSVBC123JDXV6T5G is widely used in lighting systems, portable electronics, and automotive accessories. onsemi's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the NSVBC123JDXV6T5G is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
onsemi
NSBC144EDXV6T1G
Toshiba Semiconductor and Storage
RN2714,LF
onsemi
NSVMUN5135DW1T1G
Toshiba Semiconductor and Storage
RN2901FE(TE85L,F)
NXP USA Inc.
PBLS1502Y,115
onsemi
NSBC144EPDXV6T1G
Toshiba Semiconductor and Storage
RN1903,LXHF(CT
Toshiba Semiconductor and Storage
RN4902,LF(CT
Toshiba Semiconductor and Storage
RN1904FE,LF(CT
Nexperia USA Inc.