NTC040N120SC1
onsemi
onsemi
SIC MOS WAFER SALES 40MOHM 1200V
$18.93
Available to order
Reference Price (USD)
1+
$18.93000
500+
$18.7407
1000+
$18.5514
1500+
$18.3621
2000+
$18.1728
2500+
$17.9835
Exquisite packaging
Discount
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Optimize your power electronics with the NTC040N120SC1 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NTC040N120SC1 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 348W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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