NTE299
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 35V TO202
$3.22
Available to order
Reference Price (USD)
1+
$3.22000
500+
$3.1878
1000+
$3.1556
1500+
$3.1234
2000+
$3.0912
2500+
$3.059
Exquisite packaging
Discount
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Discover the NTE299, a cutting-edge RF Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The NTE299 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose NTE Electronics, Inc for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 35V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 4W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 10V
- Current - Collector (Ic) (Max): 1A
- Operating Temperature: 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-202 Long Tab
- Supplier Device Package: TO-202
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NTE Electronics, Inc