NTE323
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 120V 1A TO39
$4.30
Available to order
Reference Price (USD)
1+
$4.30000
500+
$4.257
1000+
$4.214
1500+
$4.171
2000+
$4.128
2500+
$4.085
Exquisite packaging
Discount
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Enhance your circuit designs with the NTE323 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NTE323 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 200mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 30MHz
- Operating Temperature: 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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