NTH4L015N065SC1
onsemi
onsemi
SILICON CARBIDE MOSFET, NCHANNEL
$40.96
Available to order
Reference Price (USD)
1+
$40.96000
500+
$40.5504
1000+
$40.1408
1500+
$39.7312
2000+
$39.3216
2500+
$38.912
Exquisite packaging
Discount
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The NTH4L015N065SC1 single MOSFET from onsemi is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the NTH4L015N065SC1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 25mA
- Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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