STP7N60M2
STMicroelectronics
         
                
                                STMicroelectronics                            
                        
                                MOSFET N-CH 600V 5A TO220                            
                        $1.54
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $1.66000
                                        50+
                                            $1.34080
                                        100+
                                            $1.18290
                                        500+
                                            $0.93480
                                        1,000+
                                            $0.75440
                                        2,500+
                                            $0.70930
                                        5,000+
                                            $0.67773
                                        Exquisite packaging
                            Discount
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                    Enhance your electronic projects with the STP7N60M2 single MOSFET from STMicroelectronics. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust STMicroelectronics's STP7N60M2 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.                
            Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    