NTMTSC4D2N10GTXG
onsemi
onsemi
100V MVSOA IN DFNW8(PQFN8X8) PAC
$3.46
Available to order
Reference Price (USD)
1+
$3.45853
500+
$3.4239447
1000+
$3.3893594
1500+
$3.3547741
2000+
$3.3201888
2500+
$3.2856035
Exquisite packaging
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Enhance your electronic projects with the NTMTSC4D2N10GTXG single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NTMTSC4D2N10GTXG for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 88A, 10V
- Vgs(th) (Max) @ Id: 4V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10450 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 267W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-TDFNW (8.3x8.4)
- Package / Case: 8-PowerTDFN
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