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NTP067N65S3H

onsemi
NTP067N65S3H Preview
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
$7.14
Available to order
Reference Price (USD)
1+
$7.14000
500+
$7.0686
1000+
$6.9972
1500+
$6.9258
2000+
$6.8544
2500+
$6.783
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 3.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 266W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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