NVATS4A103PZT4G
onsemi
onsemi
MOSFET P-CHANNEL 30V 60A ATPAK
$0.00
Available to order
Reference Price (USD)
3,000+
$0.60969
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the NVATS4A103PZT4G single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NVATS4A103PZT4G for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ATPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay General Semiconductor - Diodes Division
FA57SA50LC
Infineon Technologies
IRF7424GTRPBF
STMicroelectronics
STP6NB90
Infineon Technologies
IRL3714LPBF
Renesas Electronics America Inc
RJK2557DPA-00#J0
Infineon Technologies
SPB07N60C3ATMA1
Alpha & Omega Semiconductor Inc.
AON7408L
Fairchild Semiconductor
FDB8878
Toshiba Semiconductor and Storage
TPCC8067-H,LQ(S
Rohm Semiconductor