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NVHL080N120SC1A

onsemi
NVHL080N120SC1A Preview
onsemi
SICFET N-CH 1200V 31A TO247-3
$14.08
Available to order
Reference Price (USD)
1+
$14.08000
500+
$13.9392
1000+
$13.7984
1500+
$13.6576
2000+
$13.5168
2500+
$13.376
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
  • Vgs (Max): +25, -15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 178W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3

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