NVMFWS005N10MCLT1G
onsemi
onsemi
PTNG 100V LL SO8FL
$1.06
Available to order
Reference Price (USD)
1+
$1.06339
500+
$1.0527561
1000+
$1.0421222
1500+
$1.0314883
2000+
$1.0208544
2500+
$1.0102205
Exquisite packaging
Discount
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The NVMFWS005N10MCLT1G from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NVMFWS005N10MCLT1G for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V
- Vgs(th) (Max) @ Id: 3V @ 192µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 131W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
- Package / Case: 8-PowerTDFN, 5 Leads
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