NVMYS2D3N06CTWG
onsemi
onsemi
T6 60V SL LFPAK4 5X6
$2.36
Available to order
Reference Price (USD)
1+
$2.35689
500+
$2.3333211
1000+
$2.3097522
1500+
$2.2861833
2000+
$2.2626144
2500+
$2.2390455
Exquisite packaging
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Enhance your electronic projects with the NVMYS2D3N06CTWG single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NVMYS2D3N06CTWG for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 28.7A (Ta), 171A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3584 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 134.4W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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