P3M12017K4
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1200V 151A TO-247-4
$39.75
Available to order
Reference Price (USD)
1+
$39.75000
500+
$39.3525
1000+
$38.955
1500+
$38.5575
2000+
$38.16
2500+
$37.7625
Exquisite packaging
Discount
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Meet the P3M12017K4 by PN Junction Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The P3M12017K4 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose PN Junction Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 151A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 75A, 15V
- Vgs(th) (Max) @ Id: 2.5V @ 75mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 789W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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