PBLS1502V,115
NXP USA Inc.
NXP USA Inc.
TRANS NPN PREBIAS/PNP SOT666
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Optimize your designs with NXP USA Inc.'s PBLS1502V,115, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The PBLS1502V,115 is widely used in lighting systems, portable electronics, and automotive accessories. NXP USA Inc.'s innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the PBLS1502V,115 is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 15V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA, 100nA
- Frequency - Transition: 280MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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