PDTB123YK,115
NXP USA Inc.
NXP USA Inc.
TRANS PREBIAS PNP 250MW SMT3
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NXP USA Inc. presents the PDTB123YK,115 a game-changer in pre-biased transistor technology. The device's thermal shutdown protection and 5kV ESD rating make it perfect for harsh environments like oil/gas monitoring and agricultural machinery. Its 1.5V low saturation voltage enhances energy efficiency in portable electronics and wearables.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
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