PDTC114ET/DG/B4,21
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS NPN
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineers choose PDTC114ET/DG/B4,21 for its exceptional linearity in amplification circuits. Nexperia USA Inc.'s pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
Toshiba Semiconductor and Storage
RN1106MFV(TL3,T)
Infineon Technologies
BCR 169L3 E6327
Panasonic Electronic Components
DRA9124X0L
NXP USA Inc.
PDTB123YK,115
Infineon Technologies
BCR148E6393HTSA1
Infineon Technologies
BCR 189F E6327
Toshiba Semiconductor and Storage
RN2117(T5L,F,T)
Infineon Technologies
BCR 162F E6327
Infineon Technologies
BCR166WE6327HTSA1
Infineon Technologies