PH3134-55L
MACOM Technology Solutions
MACOM Technology Solutions
RF TRANS NPN 65V
$0.00
Available to order
Reference Price (USD)
20+
$339.86650
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PH3134-55L RF Bipolar Junction Transistor (BJT) by MACOM Technology Solutions is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the PH3134-55L is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose MACOM Technology Solutions for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 7.5dB
- Power - Max: 55W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 6.5A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: -
- Supplier Device Package: -
Related Products
Central Semiconductor Corp
2N3866A TIN/LEAD
onsemi
MPSH10RLRPG
CEL
NE68833-A
Broadcom Limited
AT-32063-BLKG
onsemi
KSC2755OMTF
onsemi
MPSH17RLRAG
CEL
NE66219-A
CEL
2SC5015-A
Microsemi Corporation
MRF5812G
CEL