PJC7002H_R1_00001
Panjit International Inc.
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
$0.23
Available to order
Reference Price (USD)
1+
$0.23000
500+
$0.2277
1000+
$0.2254
1500+
$0.2231
2000+
$0.2208
2500+
$0.2185
Exquisite packaging
Discount
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Enhance your electronic projects with the PJC7002H_R1_00001 single MOSFET from Panjit International Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Panjit International Inc.'s PJC7002H_R1_00001 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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