PJQ1916_R1_00201
Panjit International Inc.
Panjit International Inc.
20V N-CHANNEL ENHANCEMENT MODE M
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the PJQ1916_R1_00201 from Panjit International Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PJQ1916_R1_00201 ensures reliable performance in demanding environments. Upgrade your circuit designs with Panjit International Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 950mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006-3
- Package / Case: 3-UFDFN
Related Products
Diodes Incorporated
DMJ70H1D4SJ3
Diodes Incorporated
DMTH6004SPS-13
onsemi
NVTFWS030N06CTAG
Diodes Incorporated
DMNH6008SPSQ-13
Rohm Semiconductor
RQ3E160ADTB1
Harris Corporation
RFP2N20
Vishay Siliconix
SQJQ142E-T1_GE3
Diodes Incorporated
DMN32D0LFB4-7B
onsemi
NCP81253AMNTBG
Goford Semiconductor