PJQ2407_R1_00001
Panjit International Inc.
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
$0.53
Available to order
Reference Price (USD)
1+
$0.53000
500+
$0.5247
1000+
$0.5194
1500+
$0.5141
2000+
$0.5088
2500+
$0.5035
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJQ2407_R1_00001 by Panjit International Inc. is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the PJQ2407_R1_00001 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1169 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020B-6
- Package / Case: 6-WDFN Exposed Pad
Related Products
Alpha & Omega Semiconductor Inc.
AOTF7T60PL
Rectron USA
RM47N650T7
Rectron USA
RM210N75HD
Vishay Siliconix
SQJQ402E-T1_GE3
NTE Electronics, Inc
NTE2396A
Infineon Technologies
IPB22N03S4L-15
Infineon Technologies
IPD70N12S311ATMA1
Panjit International Inc.
PJW5P06A-AU_R2_000A1
Infineon Technologies
IRFU7546PBF
Toshiba Semiconductor and Storage