PMH550UNEH
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 770MA DFN0606-3
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
Discount
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Meet the PMH550UNEH by Nexperia USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PMH550UNEH stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Nexperia USA Inc..
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 670mOhm @ 770mA, 4.5V
- Vgs(th) (Max) @ Id: 0.95V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 30.3 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 380mW (Ta), 2.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN0606-3
- Package / Case: 3-XFDFN
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