PMZB300XN,315
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
$0.09
Available to order
Reference Price (USD)
1+
$0.09000
500+
$0.0891
1000+
$0.0882
1500+
$0.0873
2000+
$0.0864
2500+
$0.0855
Exquisite packaging
Discount
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The PMZB300XN,315 from NXP USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the PMZB300XN,315 offers the precision and reliability you need. Trust NXP USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.94 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: SC-101, SOT-883
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