FDN335N
onsemi
onsemi
MOSFET N-CH 20V 1.7A SUPERSOT3
$0.55
Available to order
Reference Price (USD)
3,000+
$0.12524
6,000+
$0.11765
15,000+
$0.11006
30,000+
$0.10095
75,000+
$0.09715
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDN335N by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the FDN335N is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 1.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
IXYS
IXFN340N06
Infineon Technologies
IRLB8748PBF
Rohm Semiconductor
RQ3E180GNTB
Diodes Incorporated
DMP21D0UFB-7
Vishay Siliconix
SI2387DS-T1-GE3
Taiwan Semiconductor Corporation
TSM025NB04LCR RLG
Micro Commercial Co
BSS138-TP
Infineon Technologies
IRLR3636TRLPBF
onsemi
NTGS4111PT1G
Nexperia USA Inc.