RQ3E180GNTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 18A 8HSMT
$0.75
Available to order
Reference Price (USD)
3,000+
$0.22765
6,000+
$0.21980
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the RQ3E180GNTB single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RQ3E180GNTB combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
Related Products
Diodes Incorporated
DMP21D0UFB-7
Vishay Siliconix
SI2387DS-T1-GE3
Taiwan Semiconductor Corporation
TSM025NB04LCR RLG
Micro Commercial Co
BSS138-TP
Infineon Technologies
IRLR3636TRLPBF
onsemi
NTGS4111PT1G
Nexperia USA Inc.
PMV20XNER
Rohm Semiconductor
RS1E180BNTB
Infineon Technologies
IPP80N06S407AKSA2
Renesas Electronics America Inc