PQMH11Z
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN DFN1010B-6
$0.35
Available to order
Reference Price (USD)
5,000+
$0.06188
10,000+
$0.05363
25,000+
$0.05088
50,000+
$0.04813
125,000+
$0.04538
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the PQMH11Z by Nexperia USA Inc., a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the PQMH11Z excels in automotive systems, power management modules, and communication devices. Nexperia USA Inc.'s commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose PQMH11Z for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz
- Power - Max: 230mW
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
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