RN1606(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.3W SM6
$0.44
Available to order
Reference Price (USD)
3,000+
$0.06720
6,000+
$0.06048
15,000+
$0.05376
30,000+
$0.05040
75,000+
$0.04480
Exquisite packaging
Discount
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Enhance your electronic projects with Toshiba Semiconductor and Storage's RN1606(TE85L,F), a high-reliability pre-biased BJT array. This discrete semiconductor solution offers matched transistor pairs with integrated bias networks, ensuring optimal performance in amplification and switching tasks. The RN1606(TE85L,F) is perfect for use in audio equipment, power supplies, and automotive control systems. With Toshiba Semiconductor and Storage's rigorous quality control, each array provides long-term stability and minimal distortion. Compact, efficient, and easy to integrate, the RN1606(TE85L,F) is the go-to choice for engineers seeking dependable transistor solutions.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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