PSMN022-30BL,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 30A D2PAK
$0.95
Available to order
Reference Price (USD)
800+
$0.42080
1,600+
$0.38474
2,400+
$0.34867
5,600+
$0.32462
20,000+
$0.31260
Exquisite packaging
Discount
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Upgrade your designs with the PSMN022-30BL,118 by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PSMN022-30BL,118 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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