PSMN035-150P,127
NXP Semiconductors
NXP Semiconductors
NEXPERIA PSMN035-150P - 50A, 150
$0.70
Available to order
Reference Price (USD)
1+
$0.70000
500+
$0.693
1000+
$0.686
1500+
$0.679
2000+
$0.672
2500+
$0.665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PSMN035-150P,127 from NXP Semiconductors redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the PSMN035-150P,127 offers the precision and reliability you need. Trust NXP Semiconductors to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4720 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
NTE Electronics, Inc
NTE66
STMicroelectronics
STD65N55F3
onsemi
NVH4L045N065SC1
Panjit International Inc.
PJQ2409_R1_00001
Vishay Siliconix
IRFL9014TRPBF-BE3
IXYS
IXTH10P60
Panjit International Inc.
PJC7412_R1_00001
Infineon Technologies
IRF1010NPBF
Diodes Incorporated
DMTH4007SK3-13
IXYS