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IPB027N10N5ATMA1

Infineon Technologies
IPB027N10N5ATMA1 Preview
Infineon Technologies
MOSFET N-CH 100V 120A D2PAK
$6.79
Available to order
Reference Price (USD)
1,000+
$2.59967
2,000+
$2.46969
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 184µA
  • Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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