PSMN7R8-120PSQ
Nexperia USA Inc.
Nexperia USA Inc.
NEXPERIA PSMN7R8-120PSQ - 70A, 1
$1.64
Available to order
Reference Price (USD)
5,000+
$1.14400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PSMN7R8-120PSQ by Nexperia USA Inc. is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Nexperia USA Inc. for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9473 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 349W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Vishay Siliconix
SI4447DY-T1-GE3
Nexperia USA Inc.
NX3008PBKVL
Diodes Incorporated
DMT8008LK3-13
Nexperia USA Inc.
PSMNR70-40SSHJ
onsemi
FCPF190N60-F154
Infineon Technologies
BSC019N02KSGAUMA1
Infineon Technologies
IRLR2703TRPBF
Infineon Technologies
BSC040N08NS5ATMA1
Vishay Siliconix
IRFDC20PBF
Vishay Siliconix