PXP6R1-30QLJ
Nexperia USA Inc.
Nexperia USA Inc.
PXP6R1-30QL/SOT8002/MLPAK33
$1.08
Available to order
Reference Price (USD)
1+
$1.08000
500+
$1.0692
1000+
$1.0584
1500+
$1.0476
2000+
$1.0368
2500+
$1.026
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PXP6R1-30QLJ from Nexperia USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the PXP6R1-30QLJ offers the precision and reliability you need. Trust Nexperia USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MLPAK33
- Package / Case: 8-PowerVDFN
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