R6018JNXC7G
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 18A TO220FM
$5.31
Available to order
Reference Price (USD)
1+
$5.31000
500+
$5.2569
1000+
$5.2038
1500+
$5.1507
2000+
$5.0976
2500+
$5.0445
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The R6018JNXC7G single MOSFET from Rohm Semiconductor is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the R6018JNXC7G is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 286mOhm @ 9A, 15V
- Vgs(th) (Max) @ Id: 7V @ 4.2mA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 72W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
Nexperia USA Inc.
PMV35EPER
NXP USA Inc.
BUK652R6-40C,127
Diodes Incorporated
DMP2045UQ-7
Infineon Technologies
IPD78CN10NGATMA1
Infineon Technologies
BSZ180P03NS3GATMA1
Panjit International Inc.
PJS6417_S1_00001
STMicroelectronics
STB45N50DM2AG
Vishay Siliconix
SQD50N04-5M6_T4GE3
STMicroelectronics
SCTH35N65G2V-7AG
Diodes Incorporated