R8002ANJFRGTL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 800V 2A LPTS
$2.83
Available to order
Reference Price (USD)
1,000+
$1.09678
2,000+
$1.05896
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The R8002ANJFRGTL by Rohm Semiconductor is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Rohm Semiconductor for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTS
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
STMicroelectronics
STU10N60M2
Fairchild Semiconductor
FDPF10N50UT
Alpha & Omega Semiconductor Inc.
AOSP32368
Vishay Siliconix
SIHU6N65E-GE3
Vishay Siliconix
SI7172ADP-T1-RE3
Infineon Technologies
IRL2910STRLPBF
Taiwan Semiconductor Corporation
TSM7P06CP ROG
Vishay Siliconix
SQP120N10-3M8_GE3
onsemi
HUF76609D3ST
Vishay Siliconix