RBA160N04AHPF-4UA01#GB0
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER TRS2 AUTOMOTIVE MOS MP-25L
$3.64
Available to order
Reference Price (USD)
1+
$3.64000
500+
$3.6036
1000+
$3.5672
1500+
$3.5308
2000+
$3.4944
2500+
$3.458
Exquisite packaging
Discount
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Enhance your electronic projects with the RBA160N04AHPF-4UA01#GB0 single MOSFET from Renesas Electronics America Inc. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas Electronics America Inc's RBA160N04AHPF-4UA01#GB0 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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