RBN25H125S1FPQ-A0#CB0
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / IGBT
$6.35
Available to order
Reference Price (USD)
1+
$6.35000
500+
$6.2865
1000+
$6.223
1500+
$6.1595
2000+
$6.096
2500+
$6.0325
Exquisite packaging
Discount
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Discover the RBN25H125S1FPQ-A0#CB0 Single IGBT transistor by Renesas Electronics America Inc, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the RBN25H125S1FPQ-A0#CB0 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the RBN25H125S1FPQ-A0#CB0 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1250 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 25A
- Power - Max: 223 W
- Switching Energy: 1.1mJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 56 nC
- Td (on/off) @ 25°C: 19ns/109ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 102 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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