RFD16N06LESM9A
onsemi
onsemi
MOSFET N-CH 60V 16A TO252AA
$1.96
Available to order
Reference Price (USD)
2,500+
$0.67678
5,000+
$0.64481
12,500+
$0.62197
Exquisite packaging
Discount
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Optimize your power electronics with the RFD16N06LESM9A single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RFD16N06LESM9A combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): +10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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