RGTH00TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 85A 277W TO-247N
$5.83
Available to order
Reference Price (USD)
1+
$4.58000
10+
$4.11700
30+
$3.89267
120+
$3.37350
270+
$3.20052
510+
$2.87180
1,020+
$2.42200
Exquisite packaging
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The RGTH00TS65DGC11 by Rohm Semiconductor is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Rohm Semiconductor's reputation for quality, the RGTH00TS65DGC11 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 277 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 94 nC
- Td (on/off) @ 25°C: 39ns/143ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 54 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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