RGTH60TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 58A 194W TO-247N
$0.00
Available to order
Reference Price (USD)
1+
$2.98000
10+
$2.67800
30+
$2.53133
120+
$2.19375
270+
$2.08126
510+
$1.86751
1,020+
$1.57500
Exquisite packaging
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The RGTH60TS65DGC11 by Rohm Semiconductor is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Rohm Semiconductor's reputation for quality, the RGTH60TS65DGC11 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 58 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 194 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 58 nC
- Td (on/off) @ 25°C: 27ns/105ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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