RGW40TK65DGVC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$6.65
Available to order
Reference Price (USD)
1+
$6.65000
500+
$6.5835
1000+
$6.517
1500+
$6.4505
2000+
$6.384
2500+
$6.3175
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RGW40TK65DGVC11 Single IGBT transistor by Rohm Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RGW40TK65DGVC11 ensures precise power control and long-term stability. With Rohm Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RGW40TK65DGVC11 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 27 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
- Power - Max: 61 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 59 nC
- Td (on/off) @ 25°C: 33ns/76ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
Related Products
Infineon Technologies
IGA30N60H3XKSA1
IXYS
IXDR30N120D1
Infineon Technologies
IHW20N135R3
IXYS
IXYH24N90C3
Fairchild Semiconductor
FGA180N30DTU
IXYS
IXGK55N120A3H1
onsemi
NGTG30N60FLWG
IXYS
IXGF25N250
IXYS
IXBH42N170
STMicroelectronics