RJH60M2DPE-00#J3
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT
$3.16
Available to order
Reference Price (USD)
1+
$3.16000
500+
$3.1284
1000+
$3.0968
1500+
$3.0652
2000+
$3.0336
2500+
$3.002
Exquisite packaging
Discount
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Enhance your electronic projects with the RJH60M2DPE-00#J3 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RJH60M2DPE-00#J3 ensures precision and reliability. Renesas Electronics America Inc's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RJH60M2DPE-00#J3 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 25 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
- Power - Max: 63 W
- Switching Energy: 180µJ (on), 180µJ (off)
- Input Type: Standard
- Gate Charge: 33 nC
- Td (on/off) @ 25°C: 32ns/70ns
- Test Condition: 300V, 12A, 5Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-83
- Supplier Device Package: 4-LDPAK
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