RJH60V3BDPE-00#J3
Renesas Electronics America Inc

Renesas Electronics America Inc
IGBT 600V 35A 113W LDPAK
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The RJH60V3BDPE-00#J3 by Renesas Electronics America Inc is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Renesas Electronics America Inc's reputation for quality, the RJH60V3BDPE-00#J3 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 35 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 17A
- Power - Max: 113 W
- Switching Energy: 90µJ (on), 300µJ (off)
- Input Type: Standard
- Gate Charge: 60 nC
- Td (on/off) @ 25°C: 40ns/90ns
- Test Condition: 300V, 17A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-83
- Supplier Device Package: LDPAK