RJK5013DPP-E0#T2
Renesas
Renesas
RJK5013DPP-E0#T2 - SILICON N CHA
$4.56
Available to order
Reference Price (USD)
1+
$4.55523
500+
$4.5096777
1000+
$4.4641254
1500+
$4.4185731
2000+
$4.3730208
2500+
$4.3274685
Exquisite packaging
Discount
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The RJK5013DPP-E0#T2 from Renesas redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the RJK5013DPP-E0#T2 offers the precision and reliability you need. Trust Renesas to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 465mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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