RM1A5N30S3AE
Rectron USA

Rectron USA
MOSFET N-CH 30V 1.5A/1.4A SOT323
$0.04
Available to order
Reference Price (USD)
1+
$0.03900
500+
$0.03861
1000+
$0.03822
1500+
$0.03783
2000+
$0.03744
2500+
$0.03705
Exquisite packaging
Discount
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Optimize your power electronics with the RM1A5N30S3AE single MOSFET from Rectron USA. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RM1A5N30S3AE combines cutting-edge technology with Rectron USA's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 144mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323