RN1118(T5L,F,T)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SSM
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN1118(T5L,F,T) from Toshiba Semiconductor and Storage is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased transistor simplifies circuit design by integrating resistors, reducing component count and board space. Ideal for switching and amplification, it offers excellent thermal stability and low saturation voltage. Common applications include LED drivers, relay switches, and audio amplifiers. Trust Toshiba Semiconductor and Storage's expertise in discrete semiconductors for reliable performance in industrial and consumer electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
Related Products
Fairchild Semiconductor
FJY4007R
Rohm Semiconductor
DTB143TKT146
Diodes Incorporated
DDTD114TC-7-F
NXP USA Inc.
PDTC143ZS,126
Infineon Technologies
BCR 191T E6327
Panasonic Electronic Components
DRA2523Y0L
Toshiba Semiconductor and Storage
RN2103CT(TPL3)
Infineon Technologies
BCR 135 B6327
Rohm Semiconductor
DTC143ZUBHZGTL
Panasonic Electronic Components