RN1605TE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.3W SM6
$0.36
Available to order
Reference Price (USD)
3,000+
$0.06300
6,000+
$0.05670
15,000+
$0.05040
30,000+
$0.04725
75,000+
$0.04200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with Toshiba Semiconductor and Storage's RN1605TE85LF, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The RN1605TE85LF is widely used in lighting systems, portable electronics, and automotive accessories. Toshiba Semiconductor and Storage's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the RN1605TE85LF is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
Related Products
Toshiba Semiconductor and Storage
RN2703JE(TE85L,F)
NXP USA Inc.
PEMB1,115
onsemi
MUN5335DW1T2G
onsemi
SMUN5116DW1T1G
Nexperia USA Inc.
PQMH11Z
onsemi
NSBC114TDXV6T5G
Toshiba Semiconductor and Storage
RN4901FE,LF(CT
Panasonic Electronic Components
XP0111M00L
Nexperia USA Inc.
NHUMD9F
Toshiba Semiconductor and Storage