RN1909,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
$0.26
Available to order
Reference Price (USD)
1+
$0.26000
500+
$0.2574
1000+
$0.2548
1500+
$0.2522
2000+
$0.2496
2500+
$0.247
Exquisite packaging
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The RN1909,LF(CT from Toshiba Semiconductor and Storage is a versatile pre-biased BJT array designed to meet the needs of diverse electronic applications. Featuring matched transistors and built-in resistors, this product enhances circuit performance while reducing design complexity. It is commonly used in audio amplifiers, power converters, and automotive electronics. Toshiba Semiconductor and Storage's commitment to quality ensures that the RN1909,LF(CT operates flawlessly in both commercial and industrial settings. With its excellent thermal performance and high reliability, this transistor array is an essential component for any engineer's toolkit.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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