RN4985FE,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPN + PNP BRT Q1BSR2.2KOHM Q1BER
$0.24
Available to order
Reference Price (USD)
1+
$0.24000
500+
$0.2376
1000+
$0.2352
1500+
$0.2328
2000+
$0.2304
2500+
$0.228
Exquisite packaging
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Upgrade your electronic designs with the RN4985FE,LF(CT by Toshiba Semiconductor and Storage, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the RN4985FE,LF(CT excels in automotive systems, power management modules, and communication devices. Toshiba Semiconductor and Storage's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose RN4985FE,LF(CT for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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