RS1G300GNTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 40V 30A 8HSOP
$2.20
Available to order
Reference Price (USD)
2,500+
$0.82600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the RS1G300GNTB from Rohm Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the RS1G300GNTB ensures reliable performance in demanding environments. Upgrade your circuit designs with Rohm Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 56.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
Related Products
Vishay Siliconix
SI6415DQ-T1-BE3
Infineon Technologies
IAUC60N04S6N044ATMA1
Harris Corporation
IRFR222
Vishay Siliconix
SI4427BDY-T1-E3
Fairchild Semiconductor
SFW9510TM
STMicroelectronics
STH275N8F7-2AG
Infineon Technologies
IPB052N04NG
NXP Semiconductors
BUK7219-55A,118
STMicroelectronics
STB8NM60D
Vishay Siliconix